Formation kinetics of trivacancy-oxygen pairs in silicon
نویسندگان
چکیده
منابع مشابه
Trivacancy and trivacancy-oxygen complexes in silicon: Experiments and ab initio modeling
V. P. Markevich,1 A. R. Peaker,1 S. B. Lastovskii,2 L. I. Murin,2 J. Coutinho,3 V. J. B. Torres,3 P. R. Briddon,4 L. Dobaczewski,5 E. V. Monakhov,6 and B. G. Svensson6 1School of Electrical and Electronic Engineering, University of Manchester, Manchester M60 1QD, United Kingdom 2Scientific-Practical Materials Research Centre, NAS of Belarus, P. Brovka Str. 19, Minsk 220072, Belarus 3I3N, Univer...
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ژورنال
عنوان ژورنال: Journal of Applied Physics
سال: 2014
ISSN: 0021-8979,1089-7550
DOI: 10.1063/1.4896066